Description

Kingston KVR16LN11/4 4GB 1Rx8 512M x 64-Bit PC3L-12800 CL11 240-Pin DIMM

DESCRIPTION

This document describes ValueRAM's 512M x 64-bit (4GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low voltage, memory module, based on eight 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 240-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

FEATURES

  • JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply
  • VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
  • 800MHz fCK for 1600Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 11, 10, 9, 8, 7, 6
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe
  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
  • Asynchronous Reset
  • PCB Height: 0.740” (18.75mm) or 1.180” (30.00mm), single sided component

Specifications:
CL(IDD): 11 cycles
Row Cycle Time (tRCmin): 48.125nc (min.)
Refresh to Active/ Refresh Command Time (tRFCmin): 260ns (min.)
Row Active Time (tRASmin): 35ns (min.)
Maximum Operating Power: (1.35V) = 2.160 W*
UL Rating: 94 V – 0
Operating Temperature: 0°C to 85°C
Storage Temperature: -55°C to +100°C
*Power will vary depending on the SDRAM used.

KVR16LN11-4.jpg

KVR16LN11-4-1.jpg

What's in the Box:

  • 1 x Kingston 4GB DDR3

Product Details

FEATURES

  • JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power Supply
  • VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
  • 800MHz fCK for 1600Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 11, 10, 9, 8, 7, 6
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe
  • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
  • Asynchronous Reset
  • PCB Height: 0.740” (18.75mm) or 1.180” (30.00mm), single sided component

Specifications:
CL(IDD): 11 cycles
Row Cycle Time (tRCmin): 48.125nc (min.)
Refresh to Active/ Refresh Command Time (tRFCmin): 260ns (min.)
Row Active Time (tRASmin): 35ns (min.)
Maximum Operating Power: (1.35V) = 2.160 W*
UL Rating: 94 V – 0
Operating Temperature: 0°C to 85°C
Storage Temperature: -55°C to +100°C
*Power will vary depending on the SDRAM used.

KVR16LN11-4.jpg

KVR16LN11-4-1.jpg

What's in the Box:

  • 1 x Kingston 4GB DDR3

T & C

Model KVR16LN11/4
Size (L x W x H) 50x24x10 (MM)
Color Green
Warranty Period Life Time Warranty
Warranty Type Local Manufacturer Warranty

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RM 139.90
30%
Sold and fulfilled by:
Shipment and Delivery: Next Business Day
Ship To: Refer to T&C
Brand: Kingston
SKU: Kingston-KVR16LN11/4